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SLD1332u 670mW 500mW Laser Diode / Tentative Description The SLD1332V is a high power visible laser diode. This laser diode has high brightness 500mW which can be achieved by QW structure. Features *High output power *@ Recommended optical power output: Pop=500mW *QW structure *9mm Can-type Package Application *Measurement Structure *AlGaInP quantum well structure laser diode Absolute Maximum Ratings(Tc=25*Z ) *Optical power output Pomax *Reverse voltage VR LD *@ PD *Operating temperature(Tc) Topr *Storage temperature Tstg 0.55 2 15 -10 to +30 -40 to +85 W V V *Z *Z Operating Lifetime *MTTF 10,000H(effective value) at Po=0.5W,Tc=25*Z Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. Connection Diagram COMMON Pin configuration 3 PD 2 LD 1 2 1 3 1. LD Cathode 2. PD Anode 3. COMMON Bottom View *| 1*| SLD1332V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Radiation angle Perpendicular Parallel Position Positional accuracy Angle AE/ U*AE / Symbol Ith Iop Vop p Po* 0.5W Po* 0.5W Po* 0.5W Po* 0.5W Conditions Min. 660 15 4 Po* 0.5W Po* 0.5W Po* 0.5W - (Tc:case temperature, Tc=25*Z Typ. 0.4 0.8 2.4 670 23 8 1.0 0.7 Max. 0.7 1.2 3.2 680 30 15 50 3 3 Unit A A V nm degree degree Em degree degree W *^ A mA ) X, Y O O *U // A D Differential efficiency Monitor current Imon *| 2*| SLD1332V M-248 (LO-11) Reference Slot 1.0 0.4 3 2 1 Photo Diode 0 9.0 - 0.015 O O O Window Glass O 7.7 MAX 6.9 MAX 0.6 MAX 3 - O 0.45 PCD O SONY CODE EIAJ CODE JEDEC CODE M-248 3.5 Reference Plane LD Chip * Optical Distance = 2.55 *} 0.05 2.54 1.2g PACKAGE WEIGHT *| 3*| 7.0 MAX 1.5 3.4 MAX * 2.45 |
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